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代表性论文1. X. Ni, Q. Fan, B. Hua, P. Sun, Z. Cai, H. Wang, C.N. Huang and X. Gu, “Improvement of AlN material quality by high-temperature annealing toward power diodes”, IEEE Transactions on Electron Devices, doi: 10.1109/TED.2020.2991397 (May 2020)2. X. Ni, Q. Fan, R. Shimada, Ü. Özgür, and H. Morkoç, “Reduction of efficiency droop in InGaN light-emitting-diodes by coupled quantum wells”, Applied Physics Letters, 93, 171113 (2008).3. X. Ni, M. Wu, J. Lee, X. Li, A. A. Baski, Ü. Özgür, and H. Morkoç, Non-polar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition, Applied Physics Letters, 95, 111102 (2009).4. X. Ni, M. Wu, R. Shimada, X. Li, J. H. Leach, A. A. Baski, Ü. Özgür, and H. Morkoç, “Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN”, Applied Physics Letters, 95, 101106 (2009).5. X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, Ü. Özgür, H. Morkoç, A. Matulionis, “The effect of hot electron and its energy relaxation on the efficiency of InGaN light emitting diodes”, Journal of Applied Physics, 108, 033112 (2010).6. J. Xie, X. Ni, Q. Fan, R. Shimada, Ü. Özgür and Hadis Morkoç, “On the efficiency droop in InGaN MQW blue LEDs and its reduction with p-doped quantum well barriers”, Applied Physics Letters, 93, 121107 (2008).7. J.H. Leach, X. Ni, X. Li, M. Wu, Ü. Özgür, H. Morkoç, L. Zhou, D.A. Cullen, D.J. Smith, H. Cheng, Ç. Kurdak, J.R. Meyer, and I. Vurgaftman, Bias dependant two-channel conduction in InAlN/AlN/GaN structures”, Journal of Applied Physics, 107, 083706 (2010).8. M. Wu, J. H. Leach, X. Ni, X. Li, J. Xie, Ü. Özgür, S. Dogan and H. Morkoç, InAlN/GaN Heterostructure Field-Effect Transistors on Fe-doped Freestanding GaN Substrates”, Journal of Vacuum Science & Technology B Volume: 28, Issue: 5 Pages: 908-911 DOI: 10.1116/1.3481138 Published: SEP-OCT 2010. |
