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黎长建
Google Scholar
Associate Professor
Department of Materials Science and Engineering
Dr. Changjian Li obtained a Ph.D. degree in Integrative Science and Engineering Program in 2015 from National University of Singapore. He worked on the functional oxide thin film growth, properties optimization for prototypical memory device applications. From 2016-2021, he worked in Materials Science and Engineering department of the same university as a Lee Kuan Yew Postdoctoral fellow and senior research fellow. He studied the structure-property relationship from the atomic scale using the aberration-corrected scanning transmission microscope (AC-STEM). He also set up the in-situ heating and biasing STEM facility to understand the working mechanism of functional devices. He joined SUSTech in 2021 Feb as an Assistant Professor and promoted to Associate Professor in 2022. He had published over 16 research papers as the first author or corresponding author, including Science, Science Advances, Nature Communications, Advanced Materials, Physical Review X, Nano Letters, Advanced Functional Materials; the total citation is over 2400 times.
Personal Profile
Education
2015 Ph.D., NUS Graduate School of Integrative Science and Engineering, National University of Singapore (NUS), Singapore
2011 BEng. Materials Science & Engineering(MSE), NUS
2011 BS. Physics, NUS
Employment
2022 till now Associate Professor, Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, China.
2021-2022 Assistant Professor, MSE, SUSTech, Shenzhen, China.
2016 - 2020 Lee Kuan Yew Postdoctoral Fellow, Senior Research Fellow, MSE, NUS, Singapore
2015 - 2016 Research Fellow, MSE, NUS, Singapore
Honor & Awards
2021 NSFC Excellent Young Scientists Fund Program (Overseas)
2021 “Peacock Project” of Shenzhen(Class B)
2016 Lee Kuan Yew Postdoctoral Fellowshipp
2015 Chinese Government Award for Outstanding Self-Financed Students Abroad
Personal Profile
Research
As Moores' law is approaching the limit, the traditional microelectronic industry based on Von Neumann architecture is facing tremendous challenges. Functional oxides have huge potential as fundamental computing elements mimicking our brain. Dr. Li's research focuses on ferroic materials and there applications as nonvolatile memories and memristive devices. It is a hardware approach for high speed, low power neuromorphic computing: there are three research themes:
1. Physical properties of nanoscale ferroelectricity and ferromagnetism,
2. Memory and memristive devices based on ferroic materials and their key performance
3. In-situ atomic-scale STEM-EELS characterizations of non-volatile memory or memristor devices.
Teaching
MSE 319 Metallic Materials A, 2021 Fall Semester
MSE 319 Metallic Materials A, 2022 Fall Semester
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Key publications
X. Renshaw Wang#, C. J. Li#, W. M. Lü, T. R. Paudel, D. P. Leusink, M. Hoek, Nicola Poccia, Arturas Vailionis, T. Venkatesan, J. M. D. Coey, E. Y. Tsymbal, Ariando and H.Hilgenkamp “Imaging and control of ferromagnetism in LaMnO3/SrTiO3 heterostructures” Science, 349, 716 (2015).
C. J. Li, L.S. Huang, T. Li, W. M. Lü, X. P. Qiu, Z. Huang, Z.Q. Liu, Z.S.W. Zeng, R. Guo, Y.L. Zhao, K.Y. Zeng, JMD. Coey, J. S. Chen, Ariando and T. Venkatesan “Ultrathin of BaTiO3 based Ferroelectric Tunnel Junctions through Interface Engineering” Nano Letters, 15 (4), 2568 (2015)
M. S. Li†, C. H. Tang†, T. R. Paudel, D. S. Song, W. M. Lü, K. Han, Z. Huang, S. W. Zeng, X. Renshaw Wang*, P. Yang, Ariando, J. S. Chen, T. Venkatesan, E. Y. Tsymbal, C. J. Li*, S. J. Pennycook*, “Controlling Magnetic Properties of LaMnO3/SrTiO3 Heterostructures by Stoichiometry and Electronic Reconstruction: Atomic-Scale Evidence” Advanced Materials, 31, 1901386 (2019)
M. S. Li, Z. Huang*, C. H. Tang, D. S. Song, T. R. Mishra, Ariando, T. Venkatesan, C. J. Li*, Stephen John Pennycook* “Correlated Lattice Instability and Emergent Charged Domain Walls crossing Oxide Heterointerfaces” Advanced Functional Materials, 29, 1906655 (2019)
W.M. Lü*, C. J. Li*, L. M. Zheng, J. X. Xiao, W. N. Lin, Q. Li, X. Renshaw Wang, Z. Huang, S. W. Zeng, K. Han, W. X. Zhou, K. Y. Zeng, J. S. Chen, Ariando, W. W. Cao and T. Venkatesan* “Multi non-volatile state resistive switching arising from ferroelectricity and oxygen vacancy migration” Advanced Materials 29, 1606165 (2017).
Z. Q. Liu#, C. J. Li#, W. M. Lu, X. H. Huang, Z. Huang, S.W. Zeng, X. P. Qiu, L. S. Huang, A. Annadi, J. S. Chen, J. M. D. Coey, T. Venkatesan, and Ariando “Origin of the Two-Dimensional Electron Gas at LaAlO3/SrTiO3 Interfaces: The Role of Oxygen Vacancies and Electronic Reconstruction” Physical Review X, 3, 021010 (2013). † Co-first author. (top 1% highly cited).
C. J. Li, D. S. Song*, M. S. Li, C. H. Tang, D. Q. Xue, D. Y. Wan, S. J. Pennycook*, “Atomic-scale characterization of point and extended defects in niobate thin films” Ultramicroscopy, 203, 82 (2019).
J.Chai#, S. Tong#, C. J. Li#, C. Manzano#, B. Li, Y. Liu, M. Lin, L. Wong, J. Cheng, J. Wu, A. Lau, Q. Xie, S. J. Pennycook, H. Medina*, M. Yang*, S. Wang*, D. Chi*, MoS2/Polymer Heterostructures Enabling Stable Resistive Switching and Multistate Randomness. Advanced Materials 2020, 32, 2002704.
L. Liu#, C. Zhou#, X. Y. Shu, C. J. Li, T. Zhao, W. Lin, J. Deng, Q. Xie, S. Chen, J. Zhou, R. Guo, H. Wang, J.Yu, S.Shi, P. Yang, S. Pennycook, A. Manchon*, J. Chen*, “Symmetry-dependent field-free switching of perpendicular magnetization” Nature Nanotechnology 16, 277 (2021).
S. W. Zeng#*, X. M. Yin#, C. J. Li#, L. E. Chow#, C. S. Tang, K. Han, Z. Huang, Y. Cao, D. Y. Wan, Z. T. Zhang, Z. S. Lim, C. Z. Diao, P. Yang, A. T. S. Wee, S. J. Pennycook, A. Ariando*, “Observation of perfect diamagnetism and interfacial effect on the electronic structures in infinite layer Nd0.8Sr0.2NiO2 superconductors” Nature Communications 13, 743 (2022).
S.W. Zeng#*, C. J. Li#, L. E. Chow#, Y. Cao, Z. T. Zhang, C. S. Tang, X. M. Yin, Z. S. Lim, J. X. Hu, P. Yang, A. Ariando, Superconductivity in infinite-layer nickelate La(1-x)Ca(x)NiO(2) thin films., Science Advances, 8, eabl9927 (2022).
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Postdoc Researcher and Research Assistant Professor needed
2021-06-02
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Functional oxide thin film research group is looking for two Postdoc/Research Assistant Professor positions in the following area: (In-situ) Aberration corrected scanning transmission electron microscopy (STEM). Study the structure-property correlation of functional thin films, eg. Ferroelectricity and multiferroics. Pulsed laser deposition of thin films and heterostructures, Explore novel ferroelectric thin films and ferroelectric field effect transistors for neuromorphic computing. Available equipment:Double Cs corrected TEM (Titan Themis G2), Cs corrected Environmental TEMPulsed laser deposition, Physical Property Measurement System (PPMS)Requirements:PhD degree in Physics, Materials Science and related field.BenefitsMinimum annual salary 330K RMB. Salary is commensurate with experience.
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Contact Us
Contact Address
401, North Tower, Engineering Building, 1088 Xueyuan Avenue, Shenzhen 518055, P.R. China
Office Phone
88010513
Email
licj@sustech.edu.cn |
